IPP069N20NM6AKSA1 vs IRFH5015TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP069N20NM6AKSA1 sa pamamagitan ng Infineon at IRFH5015TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPP069N20NM6AKSA1 | IRFH5015TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 200 V | 150 V |
| Continuous Drain Current (ID) at TC=25C | 136 A | 56 A |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | 10 A |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| On-Resistance RDS(on) max at VGS=10V | 6.9 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Total Gate Charge at VGS=10V (Qg) | [DATA_NEEDED: Qg value] | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | — |
| Packhaging | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) | 8-PQFN (5x6) SuperSO8 |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Technology | OptiMOS 6 trench MOSFET | IR MOSFET (HEXFET) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level ng MSL | N/A (through-hole package) | — |
| Tab Connection | Electrically connected to Drain | — |
| On-Resistance (RDS(on)) max | — | 31 mOhm |
| Total Gate Charge (Qg) | — | 33 nC |
| Power Dissipation (TA=25C) | — | 3.6 W |
| Power Dissipation (TC=25C) | — | 156 W |
| Gate Drive Voltage (VGS recommended) | — | 10 V |
| Configuration | — | Single with built-in body diode |
| Temperature na Operasyon | — | -55C to +150C (TJ max) |