IPP100N12S305AKSA2 vs IPP320N20N3GXKSA1 Perbandingan

Perbandingan bersamaan detil IPP100N12S305AKSA2 dari Infineon dan IPP320N20N3GXKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPP100N12S305AKSA2 IPP320N20N3GXKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 OptiMOS 3
FET Type N-Channel —
Drain-Source Voltage (VDS) 120 V 200 V
Continuous Drain Current (ID, TC=25C) 100 A —
Continuous Drain Current (ID, TC=100C) [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Maximum Power Dissipation (PD, TC=25C) 300 W —
On-State Resistance R_DS(on) max @ VGS=10V [DATA_NEEDED: R_DS(on) max] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th)] 4 V
Gate Charge Qg typ @ VGS=10V [DATA_NEEDED: total gate charge] —
Total Gate Charge Qg [DATA_NEEDED: Qg value] —
Reverse Recovery Charge Qrr [DATA_NEEDED: Qrr value] —
Rentang Suhu Kerja -55C to +175C (TJ) -55°C to +175°C
Paket PG-TO220-3-1 (Through Hole) TO-220-3 (PG-TO220-3) through-hole
Tipe Mounting Through Hole Through Hole
Jumlah Pin 3 (Gate, Drain, Source) —
Status RoHS Compliant Compliant
Level MSL N/A (Through Hole) Not applicable (through-hole)
Avalanche Energy Rated Yes (single-pulse) —
Technology — N-Channel Trench MOSFET
Continuous Drain Current (ID) at TC=25°C — 34 A
On-State Resistance RDS(on) max at VGS=10V — 32 mΩ
Total Power Dissipation PD at TC=25°C — 136 W
Jumlah Pin — 3 (3 + Tab)
Channel Type — N-Channel
Element Configuration — Single
Lead-Free — Yes

Spek dan Sumber

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