IPP100N12S305AKSA2 vs IPP320N20N3GXKSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP100N12S305AKSA2 disebabkan oleh Infineon dan IPP320N20N3GXKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ AktifInfineon
IPP320N20N3GXKSA1 - 200V 34A OptiMOS 3 N-Channel MOSFET | Infineon
IPP320N20N3GXKSA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPP100N12S305AKSA2 | IPP320N20N3GXKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 3 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 120 V | 200 V |
| Continuous Drain Current (ID, TC=25C) | 100 A | — |
| Continuous Drain Current (ID, TC=100C) | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (PD, TC=25C) | 300 W | — |
| On-State Resistance R_DS(on) max @ VGS=10V | [DATA_NEEDED: R_DS(on) max] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | 4 V |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: total gate charge] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| Gambaran Suhu Operasi | -55C to +175C (TJ) | -55°C to +175°C |
| Kemasan | PG-TO220-3-1 (Through Hole) | TO-220-3 (PG-TO220-3) through-hole |
| Jenis Pemasangan | Through Hole | Through Hole |
| Kiraan Pin | 3 (Gate, Drain, Source) | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | N/A (Through Hole) | Not applicable (through-hole) |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Technology | — | N-Channel Trench MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 34 A |
| On-State Resistance RDS(on) max at VGS=10V | — | 32 mΩ |
| Total Power Dissipation PD at TC=25°C | — | 136 W |
| Bilangan Pin | — | 3 (3 + Tab) |
| Channel Type | — | N-Channel |
| Element Configuration | — | Single |
| Lead-Free | — | Yes |