IPW60R041C6FKSA1 vs IPP60R180P7XKSA1 Perbandingan
Perbandingan bersamaan detil IPW60R041C6FKSA1 dari Infineon dan IPP60R180P7XKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPW60R041C6FKSA1 | IPP60R180P7XKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | NRND | Aktif |
| Technology | CoolMOS™ C6 (Superjunction N-channel) | CoolMOS P7 (Superjunction N-Channel) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 77.5 A | — |
| Power Dissipation (PD, Tc=25°C) | 481 W | — |
| On-State Resistance (RDS(on)) | 41 mΩ at VGS=10V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V typical | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Rise Time (tr) | [DATA_NEEDED: tr value] | — |
| Fall Time (tf) | [DATA_NEEDED: tf value] | — |
| Rentang Suhu Kerja | -55°C to +150°C | -55 °C to +150 °C |
| Paket | PG-TO247-3-1 (TO-247-3) | PG-TO220-3 (through-hole) |
| Tipe Mounting | Through Hole | Through Hole |
| Level MSL | Not Applicable (Through-hole) | N/A (through-hole) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Manufacturer | — | Infineon Technologies |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current at TC=25°C] |
| On-Resistance RDS(on) max at VGS=10V | — | 180 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Power Dissipation PD at TC=25°C | — | 72 W |
| Jumlah Pin | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes |