IPW60R041C6FKSA1 vs IPP60R180P7XKSA1 比較
詳細並排比較 IPW60R041C6FKSA1 由 Infineon 與 IPP60R180P7XKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPW60R041C6FKSA1 | IPP60R180P7XKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | NRND | 啟用中 |
| Technology | CoolMOS™ C6 (Superjunction N-channel) | CoolMOS P7 (Superjunction N-Channel) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 77.5 A | — |
| Power Dissipation (PD, Tc=25°C) | 481 W | — |
| On-State Resistance (RDS(on)) | 41 mΩ at VGS=10V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V typical | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Rise Time (tr) | [DATA_NEEDED: tr value] | — |
| Fall Time (tf) | [DATA_NEEDED: tf value] | — |
| 工作溫度範圍 | -55°C to +150°C | -55 °C to +150 °C |
| 封裝 | PG-TO247-3-1 (TO-247-3) | PG-TO220-3 (through-hole) |
| 安裝類型 | Through Hole | Through Hole |
| MSL 等級 | Not Applicable (Through-hole) | N/A (through-hole) |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Manufacturer | — | Infineon Technologies |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current at TC=25°C] |
| On-Resistance RDS(on) max at VGS=10V | — | 180 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Power Dissipation PD at TC=25°C | — | 72 W |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes |