IPW60R041C6FKSA1 vs IPP60R180P7XKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPW60R041C6FKSA1 disebabkan oleh Infineon dan IPP60R180P7XKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPW60R041C6FKSA1 IPP60R180P7XKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup NRND Aktif
Technology CoolMOS™ C6 (Superjunction N-channel) CoolMOS P7 (Superjunction N-Channel)
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25°C) 77.5 A —
Power Dissipation (PD, Tc=25°C) 481 W —
On-State Resistance (RDS(on)) 41 mΩ at VGS=10V —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V typical —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Rise Time (tr) [DATA_NEEDED: tr value] —
Fall Time (tf) [DATA_NEEDED: tf value] —
Gambaran Suhu Operasi -55°C to +150°C -55 °C to +150 °C
Kemasan PG-TO247-3-1 (TO-247-3) PG-TO220-3 (through-hole)
Jenis Pemasangan Through Hole Through Hole
Aras MSL Not Applicable (Through-hole) N/A (through-hole)
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Manufacturer — Infineon Technologies
Continuous Drain Current (ID) at TC=25°C — 18 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current at TC=25°C]
On-Resistance RDS(on) max at VGS=10V — 180 mΩ
Gate Threshold Voltage VGS(th) typ — 3.5 V
Gate Charge Qg typ — [DATA_NEEDED: total gate charge at VGS=10V]
Power Dissipation PD at TC=25°C — 72 W
Bilangan Pin — 3 (Gate, Drain, Source)
Avalanche Energy Rated — Yes

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga