IPW65R041CFD vs STI38N65M5 Perbandingan

Perbandingan bersamaan detil IPW65R041CFD dari Infineon dan STI38N65M5 dari STMicroelectronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPW65R041CFD STI38N65M5
Merek Infineon STMicroelectronics
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel N-Channel
Operating Mode Enhancement —
Technology CoolMOS CFD2 (superjunction, fast body diode) —
Drain-Source Breakdown Voltage V(BR)DSS 650 V —
On-Resistance RDS(on) 41 mOhm —
Continuous Drain Current ID 68.5 A (Tc) —
Power Dissipation PD 500 W (Tc) —
Total Gate Charge Qg 300 nC —
Gate-Source Voltage VGS [DATA_NEEDED: VGS rating] —
Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) range] —
Thermal Resistance RthJC [DATA_NEEDED: RthJC] —
Body Diode Integrated fast body diode —
Paket PG-TO247-3 (TO-247, through-hole) TO-247
Tipe Mounting Through Hole Through Hole
Package Color / Material Green plastic (halogen-aware molding per digchip listing) —
Status RoHS Compliant (GREEN package per digchip specification listing) Compliant
Application Segment Industrial —
Drain-Source Voltage (VDS) — 650 V
Continuous Drain Current (ID) at 25°C — 38 A
Continuous Drain Current (ID) at 100°C — 24 A
Pulsed Drain Current (IDM) — 152 A
Gate-Source Voltage (VGS) — ±30 V
On-Resistance (RDS(on)) — 0.099 ohm (typical)
Total Gate Charge (Qg) — 110 nC
Input Capacitance (Ciss) — 4200 pF
Output Capacitance (Coss) — 180 pF
Reverse Transfer Capacitance (Crss) — 12 pF
Avalanche Energy (EAS) — 1.2 J
Rentang Suhu Kerja — -55°C to +150°C
Bebas Halogen — Yes

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