IPW65R041CFD vs STI38N65M5 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPW65R041CFD disebabkan oleh Infineon dan STI38N65M5 disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
STMicroelectronics
STI38N65M5 - 650V 38A N-Channel Power MOSFET | STMicroelectronics
STI38N65M5 ✓ AktifPengandingan Spesifikasi
| Parametr | IPW65R041CFD | STI38N65M5 |
|---|---|---|
| Merek | Infineon | STMicroelectronics |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | N-Channel |
| Operating Mode | Enhancement | — |
| Technology | CoolMOS CFD2 (superjunction, fast body diode) | — |
| Drain-Source Breakdown Voltage V(BR)DSS | 650 V | — |
| On-Resistance RDS(on) | 41 mOhm | — |
| Continuous Drain Current ID | 68.5 A (Tc) | — |
| Power Dissipation PD | 500 W (Tc) | — |
| Total Gate Charge Qg | 300 nC | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS rating] | — |
| Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) range] | — |
| Thermal Resistance RthJC | [DATA_NEEDED: RthJC] | — |
| Body Diode | Integrated fast body diode | — |
| Kemasan | PG-TO247-3 (TO-247, through-hole) | TO-247 |
| Jenis Pemasangan | Through Hole | Through Hole |
| Package Color / Material | Green plastic (halogen-aware molding per digchip listing) | — |
| Status RoHS | Compliant (GREEN package per digchip specification listing) | Compliant |
| Application Segment | Industrial | — |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID) at 25°C | — | 38 A |
| Continuous Drain Current (ID) at 100°C | — | 24 A |
| Pulsed Drain Current (IDM) | — | 152 A |
| Gate-Source Voltage (VGS) | — | ±30 V |
| On-Resistance (RDS(on)) | — | 0.099 ohm (typical) |
| Total Gate Charge (Qg) | — | 110 nC |
| Input Capacitance (Ciss) | — | 4200 pF |
| Output Capacitance (Coss) | — | 180 pF |
| Reverse Transfer Capacitance (Crss) | — | 12 pF |
| Avalanche Energy (EAS) | — | 1.2 J |
| Gambaran Suhu Operasi | — | -55°C to +150°C |
| Boson Bebas | — | Yes |