IPW65R041CFD vs STI38N65M5 比較
詳細並排比較 IPW65R041CFD 由 Infineon 與 STI38N65M5 由 STMicroelectronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
STMicroelectronics
STI38N65M5 - 650V 38A N-Channel Power MOSFET | STMicroelectronics
STI38N65M5 ✓ 啟用中規格比較
| 參數 | IPW65R041CFD | STI38N65M5 |
|---|---|---|
| 品牌 | Infineon | STMicroelectronics |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | N-Channel |
| Operating Mode | Enhancement | — |
| Technology | CoolMOS CFD2 (superjunction, fast body diode) | — |
| Drain-Source Breakdown Voltage V(BR)DSS | 650 V | — |
| On-Resistance RDS(on) | 41 mOhm | — |
| Continuous Drain Current ID | 68.5 A (Tc) | — |
| Power Dissipation PD | 500 W (Tc) | — |
| Total Gate Charge Qg | 300 nC | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS rating] | — |
| Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) range] | — |
| Thermal Resistance RthJC | [DATA_NEEDED: RthJC] | — |
| Body Diode | Integrated fast body diode | — |
| 封裝 | PG-TO247-3 (TO-247, through-hole) | TO-247 |
| 安裝類型 | Through Hole | Through Hole |
| Package Color / Material | Green plastic (halogen-aware molding per digchip listing) | — |
| RoHS 狀態 | Compliant (GREEN package per digchip specification listing) | Compliant |
| Application Segment | Industrial | — |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID) at 25°C | — | 38 A |
| Continuous Drain Current (ID) at 100°C | — | 24 A |
| Pulsed Drain Current (IDM) | — | 152 A |
| Gate-Source Voltage (VGS) | — | ±30 V |
| On-Resistance (RDS(on)) | — | 0.099 ohm (typical) |
| Total Gate Charge (Qg) | — | 110 nC |
| Input Capacitance (Ciss) | — | 4200 pF |
| Output Capacitance (Coss) | — | 180 pF |
| Reverse Transfer Capacitance (Crss) | — | 12 pF |
| Avalanche Energy (EAS) | — | 1.2 J |
| 工作溫度範圍 | — | -55°C to +150°C |
| 無鹵素 | — | Yes |