IQEH50NE2LM7ZCGATMA1 vs IQFH55N04NM6ATMA1 Perbandingan

Perbandingan bersamaan detil IQEH50NE2LM7ZCGATMA1 dari Infineon dan IQFH55N04NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IQEH50NE2LM7ZCGATMA1 IQFH55N04NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (Vds) Max 25 V —
Continuous Drain Current (Ta) 54 A —
Continuous Drain Current (Tc) 422 A —
Maximum On-Resistance (Rds(on)) 0.5 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.7 V —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 150 W —
Maximum Junction Temperature +175 degrees C —
Rentang Suhu Kerja -55 degrees C to +175 degrees C —
Paket PG-TTFN-9-3 PG-TSON-12-1 (PQFN 8x6 mm², clip-based)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 7 (Trench-Gate) Trench MOSFET (OptiMOS 6 generation)
Status RoHS Compliant Compliant
Qualification Industrial grade per Infineon datasheet —
Part Family — OptiMOS 6
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) @ TA=25°C — 53 A
Pulsed Drain Current @ TC=25°C — 451 A
Static R_DS(on) (typ) — 0.55 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 214 W
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Gate Charge (Q_G) — [DATA_NEEDED: total gate charge]
Suhu Hubung Kerja — -55°C to +175°C
AEC-Q100 — [DATA_NEEDED: automotive qualification status]

Spek dan Sumber

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