IQEH50NE2LM7ZCGATMA1 vs IQFH55N04NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQEH50NE2LM7ZCGATMA1 sa pamamagitan ng Infineon at IQFH55N04NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ NakahandaInfineon
IQFH55N04NM6ATMA1 - 40V 451A 0.55mΩ OptiMOS 6 MOSFET | Infineon
IQFH55N04NM6ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQEH50NE2LM7ZCGATMA1 | IQFH55N04NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds) Max | 25 V | — |
| Continuous Drain Current (Ta) | 54 A | — |
| Continuous Drain Current (Tc) | 422 A | — |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 150 W | — |
| Maximum Junction Temperature | +175 degrees C | — |
| Hanay ng Temperature na Operasyon | -55 degrees C to +175 degrees C | — |
| Packhaging | PG-TTFN-9-3 | PG-TSON-12-1 (PQFN 8x6 mm², clip-based) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | Trench MOSFET (OptiMOS 6 generation) |
| Tindminan RoHS | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | — |
| Part Family | — | OptiMOS 6 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) @ TA=25°C | — | 53 A |
| Pulsed Drain Current @ TC=25°C | — | 451 A |
| Static R_DS(on) (typ) | — | 0.55 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 214 W |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| Temperature ng Junction na Operasyon | — | -55°C to +175°C |
| AEC-Q100 | — | [DATA_NEEDED: automotive qualification status] |