IQEH50NE2LM7ZCGATMA1 vs IQFH55N04NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH50NE2LM7ZCGATMA1 disebabkan oleh Infineon dan IQFH55N04NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IQEH50NE2LM7ZCGATMA1 IQFH55N04NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (Vds) Max 25 V —
Continuous Drain Current (Ta) 54 A —
Continuous Drain Current (Tc) 422 A —
Maximum On-Resistance (Rds(on)) 0.5 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.7 V —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 150 W —
Maximum Junction Temperature +175 degrees C —
Gambaran Suhu Operasi -55 degrees C to +175 degrees C —
Kemasan PG-TTFN-9-3 PG-TSON-12-1 (PQFN 8x6 mm², clip-based)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 7 (Trench-Gate) Trench MOSFET (OptiMOS 6 generation)
Status RoHS Compliant Compliant
Qualification Industrial grade per Infineon datasheet —
Part Family — OptiMOS 6
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) @ TA=25°C — 53 A
Pulsed Drain Current @ TC=25°C — 451 A
Static R_DS(on) (typ) — 0.55 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 214 W
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Gate Charge (Q_G) — [DATA_NEEDED: total gate charge]
Suhu Hubungan Operasi — -55°C to +175°C
AEC-Q100 — [DATA_NEEDED: automotive qualification status]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga