IR21834STRPBF vs IRS2011STRPBF Perbandingan

Perbandingan bersamaan detil IR21834STRPBF dari Infineon dan IRS2011STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR21834STRPBF IRS2011STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-Bridge High-Side and Low-Side, Independent Channels
Input Type Inverting, Non-Inverting —
Jumlah Output 2 (High Side / Low Side) 2
Number of Drivers 2 —
Peak Source Current 1.9 A —
Peak Sink Current 2.3 A —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Maximum Floating Supply Voltage 600 V —
Propagation Delay 180 ns (typical) —
Logic Input Compatibility 3.3 V and 5 V 3.3 V CMOS / LSTTL
Undervoltage Lockout Yes (both channels) —
dV/dt Immunity Yes —
Negative Transient Tolerance Yes Yes, dV/dt immune
Paket 14-SOIC (3.90 mm width) 8-SOIC (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Packaging Tape & Reel —
Suhu Kerja -40 C to +125 C -40 C to +125 C
Status RoHS Compliant Compliant (PBF suffix)
Fungsi — Half-Bridge Gate Driver
Maximum Offset Voltage (High-Side) — 200 V
Output Current (Source / Sink) — 1 A typical / 1 A typical
Propagation Delay (ton/toff) — 60 ns typical
Delay Matching — 20 ns maximum
Bootstrap Supply — Integrated bootstrap diode, floating channel
Suitable Drivers — MOSFETs and IGBTs

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