IR21834STRPBF vs IRS2011STRPBF 比較

詳細並排比較 IR21834STRPBF 由 Infineon 與 IRS2011STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IR21834STRPBF IR21834STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR21834STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR21834STRPBF ✓ 啟用中
Infineon
IRS2011STRPBF IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF ✓ 啟用中

規格比較

參數 IR21834STRPBF IRS2011STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration Half-Bridge High-Side and Low-Side, Independent Channels
Input Type Inverting, Non-Inverting —
輸出數量 2 (High Side / Low Side) 2
Number of Drivers 2 —
Peak Source Current 1.9 A —
Peak Sink Current 2.3 A —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Maximum Floating Supply Voltage 600 V —
Propagation Delay 180 ns (typical) —
Logic Input Compatibility 3.3 V and 5 V 3.3 V CMOS / LSTTL
Undervoltage Lockout Yes (both channels) —
dV/dt Immunity Yes —
Negative Transient Tolerance Yes Yes, dV/dt immune
封裝 14-SOIC (3.90 mm width) 8-SOIC (DSO-8)
安裝類型 Surface Mount Surface Mount
Packaging Tape & Reel —
工作溫度 -40 C to +125 C -40 C to +125 C
RoHS 狀態 Compliant Compliant (PBF suffix)
功能 — Half-Bridge Gate Driver
Maximum Offset Voltage (High-Side) — 200 V
Output Current (Source / Sink) — 1 A typical / 1 A typical
Propagation Delay (ton/toff) — 60 ns typical
Delay Matching — 20 ns maximum
Bootstrap Supply — Integrated bootstrap diode, floating channel
Suitable Drivers — MOSFETs and IGBTs

資料表與資源

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