IR21834STRPBF vs IRS2011STRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IR21834STRPBF disebabkan oleh Infineon dan IRS2011STRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IR21834STRPBF IRS2011STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-Bridge High-Side and Low-Side, Independent Channels
Input Type Inverting, Non-Inverting —
Bilangan Output 2 (High Side / Low Side) 2
Number of Drivers 2 —
Peak Source Current 1.9 A —
Peak Sink Current 2.3 A —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Maximum Floating Supply Voltage 600 V —
Propagation Delay 180 ns (typical) —
Logic Input Compatibility 3.3 V and 5 V 3.3 V CMOS / LSTTL
Undervoltage Lockout Yes (both channels) —
dV/dt Immunity Yes —
Negative Transient Tolerance Yes Yes, dV/dt immune
Kemasan 14-SOIC (3.90 mm width) 8-SOIC (DSO-8)
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape & Reel —
Suhu Operasi -40 C to +125 C -40 C to +125 C
Status RoHS Compliant Compliant (PBF suffix)
Fungsi — Half-Bridge Gate Driver
Maximum Offset Voltage (High-Side) — 200 V
Output Current (Source / Sink) — 1 A typical / 1 A typical
Propagation Delay (ton/toff) — 60 ns typical
Delay Matching — 20 ns maximum
Bootstrap Supply — Integrated bootstrap diode, floating channel
Suitable Drivers — MOSFETs and IGBTs

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