IRF1010ZPBF vs IRF2907ZSTRLPBF Perbandingan

Perbandingan bersamaan detil IRF1010ZPBF dari Infineon dan IRF2907ZSTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF1010ZPBF IRF2907ZSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (Vdss) 55 V —
Continuous Drain Current (Id) at Tc 75 A (Tc=25C) —
Power Dissipation (Pd) at Tc 140 W (Tc=25C) —
On-Resistance (Rds on) Max [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing) —
Total Gate Charge (Qg) 63 nC (typ, per Mouser listing) —
MOSFET Operating Mode Enhancement —
Paket TO-220AB (3-pin + tab), Through Hole D2PAK (TO-263AB) surface mount
Configuration Single MOSFET —
Maximum Junction Temperature 175 C —
Tipe Mounting Through Hole Surface Mount (SMD)
Qualification JEDEC industry standard qualification —
Avalanche Rating Improved repetitive avalanche rated Repetitive avalanche allowed up to TJ(max)
Status RoHS Compliant (PBF = Pb-free) Compliant
Lead Status Lead Free —
Gate Threshold Voltage (Vgs th) [DATA_NEEDED: gate threshold voltage range] —
Transistor Polarity — N-Channel
Drain-Source Voltage V(BR)DSS — 75 V
Arus Alir Berlanjut (TC=25°C) — 170 A
Arus Alir Berlanjut (TC=100°C) — [DATA_NEEDED: ID at TC=100C]
RDS(on) max at VGS = 10 V — 4.5 mOhm
RDS(on) typical at VGS = 10 V — 3.5 mOhm
Gate Threshold Voltage VGS(th) — 2.0 V to 4.0 V
Maximum Power Dissipation (TC = 25 C) — 300 W
Suhu Hubung Kerja — -55 C to +175 C
Technology — IR HEXFET / IR MOSFET
Jumlah Pin — 3 (Gate, Drain, Source)
Packaging — Tape and Reel (left orientation)
Lead-Free — Yes (PBF suffix)

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