IRF1010ZPBF vs IRF2907ZSTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF1010ZPBF disebabkan oleh Infineon dan IRF2907ZSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF1010ZPBF IRF2907ZSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (Vdss) 55 V —
Continuous Drain Current (Id) at Tc 75 A (Tc=25C) —
Power Dissipation (Pd) at Tc 140 W (Tc=25C) —
On-Resistance (Rds on) Max [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing) —
Total Gate Charge (Qg) 63 nC (typ, per Mouser listing) —
MOSFET Operating Mode Enhancement —
Kemasan TO-220AB (3-pin + tab), Through Hole D2PAK (TO-263AB) surface mount
Configuration Single MOSFET —
Maximum Junction Temperature 175 C —
Jenis Pemasangan Through Hole Surface Mount (SMD)
Qualification JEDEC industry standard qualification —
Avalanche Rating Improved repetitive avalanche rated Repetitive avalanche allowed up to TJ(max)
Status RoHS Compliant (PBF = Pb-free) Compliant
Lead Status Lead Free —
Gate Threshold Voltage (Vgs th) [DATA_NEEDED: gate threshold voltage range] —
Transistor Polarity — N-Channel
Drain-Source Voltage V(BR)DSS — 75 V
Arus Kumpal Tetap (TC=25°C) — 170 A
Arus Kumpal Tetap (TC=100°C) — [DATA_NEEDED: ID at TC=100C]
RDS(on) max at VGS = 10 V — 4.5 mOhm
RDS(on) typical at VGS = 10 V — 3.5 mOhm
Gate Threshold Voltage VGS(th) — 2.0 V to 4.0 V
Maximum Power Dissipation (TC = 25 C) — 300 W
Suhu Hubungan Operasi — -55 C to +175 C
Technology — IR HEXFET / IR MOSFET
Kiraan Pin — 3 (Gate, Drain, Source)
Packaging — Tape and Reel (left orientation)
Lead-Free — Yes (PBF suffix)

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