IRF1010ZPBF vs IRF2907ZSTRLPBF 比較
詳細並排比較 IRF1010ZPBF 由 Infineon 與 IRF2907ZSTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF1010ZPBF | IRF2907ZSTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc | 75 A (Tc=25C) | — |
| Power Dissipation (Pd) at Tc | 140 W (Tc=25C) | — |
| On-Resistance (Rds on) Max | [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing) | — |
| Total Gate Charge (Qg) | 63 nC (typ, per Mouser listing) | — |
| MOSFET Operating Mode | Enhancement | — |
| 封裝 | TO-220AB (3-pin + tab), Through Hole | D2PAK (TO-263AB) surface mount |
| Configuration | Single MOSFET | — |
| Maximum Junction Temperature | 175 C | — |
| 安裝類型 | Through Hole | Surface Mount (SMD) |
| Qualification | JEDEC industry standard qualification | — |
| Avalanche Rating | Improved repetitive avalanche rated | Repetitive avalanche allowed up to TJ(max) |
| RoHS 狀態 | Compliant (PBF = Pb-free) | Compliant |
| Lead Status | Lead Free | — |
| Gate Threshold Voltage (Vgs th) | [DATA_NEEDED: gate threshold voltage range] | — |
| Transistor Polarity | — | N-Channel |
| Drain-Source Voltage V(BR)DSS | — | 75 V |
| 連續汲極電流 (TC=25°C) | — | 170 A |
| 連續汲極電流 (TC=100°C) | — | [DATA_NEEDED: ID at TC=100C] |
| RDS(on) max at VGS = 10 V | — | 4.5 mOhm |
| RDS(on) typical at VGS = 10 V | — | 3.5 mOhm |
| Gate Threshold Voltage VGS(th) | — | 2.0 V to 4.0 V |
| Maximum Power Dissipation (TC = 25 C) | — | 300 W |
| 工作接面溫度 | — | -55 C to +175 C |
| Technology | — | IR HEXFET / IR MOSFET |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| Packaging | — | Tape and Reel (left orientation) |
| Lead-Free | — | Yes (PBF suffix) |