IRF2907ZSTRLPBF vs IRFR4615TRLPBF Perbandingan

Perbandingan bersamaan detil IRF2907ZSTRLPBF dari Infineon dan IRFR4615TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRF2907ZSTRLPBF IRFR4615TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity N-Channel —
Drain-Source Voltage V(BR)DSS 75 V —
Arus Alir Berlanjut (TC=25°C) 170 A —
Arus Alir Berlanjut (TC=100°C) [DATA_NEEDED: ID at TC=100C] —
RDS(on) max at VGS = 10 V 4.5 mOhm —
RDS(on) typical at VGS = 10 V 3.5 mOhm —
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V —
Maximum Power Dissipation (TC = 25 C) 300 W —
Suhu Hubung Kerja -55 C to +175 C —
Technology IR HEXFET / IR MOSFET IR MOSFET (N-Channel Enhancement Mode)
Paket D2PAK (TO-263AB) surface mount TO-252AA (DPAK)
Jumlah Pin 3 (Gate, Drain, Source) —
Tipe Mounting Surface Mount (SMD) Surface Mount
Packaging Tape and Reel (left orientation) —
Lead-Free Yes (PBF suffix) —
Status RoHS Compliant —
Avalanche Rating Repetitive avalanche allowed up to TJ(max) —
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at TC=25C — 33 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
On-Resistance RDS(on) max at VGS=10V — 42 mOhm
Total Gate Charge (Qg) — 26 nC
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Power Dissipation (PD) at TC=25C — 144 W
Avalanche Energy (EAS) — 109 mJ
Rentang Suhu Kerja — -55C to +175C
Lead-Free / RoHS — Yes (PBF suffix indicates Pb-free)
Energi Pulsa Tandai — 109 mJ

Spek dan Sumber

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