IRF2907ZSTRLPBF vs IRFR4615TRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF2907ZSTRLPBF disebabkan oleh Infineon dan IRFR4615TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF ✓ Aktif

Pengandingan Spesifikasi

Parametr IRF2907ZSTRLPBF IRFR4615TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity N-Channel —
Drain-Source Voltage V(BR)DSS 75 V —
Arus Kumpal Tetap (TC=25°C) 170 A —
Arus Kumpal Tetap (TC=100°C) [DATA_NEEDED: ID at TC=100C] —
RDS(on) max at VGS = 10 V 4.5 mOhm —
RDS(on) typical at VGS = 10 V 3.5 mOhm —
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V —
Maximum Power Dissipation (TC = 25 C) 300 W —
Suhu Hubungan Operasi -55 C to +175 C —
Technology IR HEXFET / IR MOSFET IR MOSFET (N-Channel Enhancement Mode)
Kemasan D2PAK (TO-263AB) surface mount TO-252AA (DPAK)
Kiraan Pin 3 (Gate, Drain, Source) —
Jenis Pemasangan Surface Mount (SMD) Surface Mount
Packaging Tape and Reel (left orientation) —
Lead-Free Yes (PBF suffix) —
Status RoHS Compliant —
Avalanche Rating Repetitive avalanche allowed up to TJ(max) —
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at TC=25C — 33 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
On-Resistance RDS(on) max at VGS=10V — 42 mOhm
Total Gate Charge (Qg) — 26 nC
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Power Dissipation (PD) at TC=25C — 144 W
Avalanche Energy (EAS) — 109 mJ
Gambaran Suhu Operasi — -55C to +175C
Lead-Free / RoHS — Yes (PBF suffix indicates Pb-free)
Tenaga Gesa tunggal padek — 109 mJ

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