IRF530NPBF vs IRFR4615TRLPBF Perbandingan
Perbandingan bersamaan detil IRF530NPBF dari Infineon dan IRFR4615TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF530NPBF | IRFR4615TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Part Number | IRF530NPBF | — |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Tipe Transistor | N-Channel HEXFET Power MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 150 V |
| Continuous Drain Current (ID) at Tc | 17 A | — |
| Pulsed Drain Current (IDM) | 60 A | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 90 mOhm (max, approximate per datasheet) | — |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Maximum Power Dissition (Pd) at Tc | 70 W | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Paket / Case | TO-220AB (through-hole) | — |
| Tipe Mounting | Through Hole | Surface Mount |
| Avalanche Rated | Yes | — |
| Status RoHS | Compliant | — |
| Level MSL | N/A (through-hole) | — |
| Configuration | Single N-channel, 3 pins (Gate, Drain, Source) | — |
| Technology | — | IR MOSFET (N-Channel Enhancement Mode) |
| Continuous Drain Current (ID) at TC=25C | — | 33 A |
| On-Resistance RDS(on) max at VGS=10V | — | 42 mOhm |
| Total Gate Charge (Qg) | — | 26 nC |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Power Dissipation (PD) at TC=25C | — | 144 W |
| Avalanche Energy (EAS) | — | 109 mJ |
| Rentang Suhu Kerja | — | -55C to +175C |
| Paket | — | TO-252AA (DPAK) |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates Pb-free) |
| Energi Pulsa Tandai | — | 109 mJ |