IRF530NPBF vs IRFR4615TRLPBF 比較
詳細並排比較 IRF530NPBF 由 Infineon 與 IRFR4615TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF530NPBF | IRFR4615TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Part Number | IRF530NPBF | — |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| 電晶體類型 | N-Channel HEXFET Power MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 150 V |
| Continuous Drain Current (ID) at Tc | 17 A | — |
| Pulsed Drain Current (IDM) | 60 A | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 90 mOhm (max, approximate per datasheet) | — |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Maximum Power Dissition (Pd) at Tc | 70 W | — |
| 工作接面溫度 | -55 C to +175 C | — |
| 封裝 / 外殼 | TO-220AB (through-hole) | — |
| 安裝類型 | Through Hole | Surface Mount |
| Avalanche Rated | Yes | — |
| RoHS 狀態 | Compliant | — |
| MSL 等級 | N/A (through-hole) | — |
| Configuration | Single N-channel, 3 pins (Gate, Drain, Source) | — |
| Technology | — | IR MOSFET (N-Channel Enhancement Mode) |
| Continuous Drain Current (ID) at TC=25C | — | 33 A |
| On-Resistance RDS(on) max at VGS=10V | — | 42 mOhm |
| Total Gate Charge (Qg) | — | 26 nC |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Power Dissipation (PD) at TC=25C | — | 144 W |
| Avalanche Energy (EAS) | — | 109 mJ |
| 工作溫度範圍 | — | -55C to +175C |
| 封裝 | — | TO-252AA (DPAK) |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates Pb-free) |
| 單脈衝突崩能量 | — | 109 mJ |