IRF530NPBF vs IRFR4615TRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF530NPBF sa pamamagitan ng Infineon at IRFR4615TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRF530NPBF IRFR4615TRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Part Number IRF530NPBF —
Manufacturer Infineon Technologies (formerly International Rectifier) —
Uri ng Transistor N-Channel HEXFET Power MOSFET —
Drain-Source Voltage (VDS) 100 V 150 V
Continuous Drain Current (ID) at Tc 17 A —
Pulsed Drain Current (IDM) 60 A [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 90 mOhm (max, approximate per datasheet) —
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Maximum Power Dissition (Pd) at Tc 70 W —
Temperature ng Junction na Operasyon -55 C to +175 C —
Packhaging / Kaso TO-220AB (through-hole) —
Uri ng Pagpapasok Through Hole Surface Mount
Avalanche Rated Yes —
Tindminan RoHS Compliant —
Level ng MSL N/A (through-hole) —
Configuration Single N-channel, 3 pins (Gate, Drain, Source) —
Technology — IR MOSFET (N-Channel Enhancement Mode)
Continuous Drain Current (ID) at TC=25C — 33 A
On-Resistance RDS(on) max at VGS=10V — 42 mOhm
Total Gate Charge (Qg) — 26 nC
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Power Dissipation (PD) at TC=25C — 144 W
Avalanche Energy (EAS) — 109 mJ
Hanay ng Temperature na Operasyon — -55C to +175C
Packhaging — TO-252AA (DPAK)
Lead-Free / RoHS — Yes (PBF suffix indicates Pb-free)
Energia ng Isang Pagpupuslit ng Pagbubwis — 109 mJ

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