IRF640NPBF vs IRFB7437PBF Perbandingan

Perbandingan bersamaan detil IRF640NPBF dari Infineon dan IRFB7437PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF640NPBF IRFB7437PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at Tc 18 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current value]
Gate-to-Source Voltage (VGS) max ±20 V —
Static Drain-to-Source On-Resistance (RDS(on)) 150 mOhm max at VGS = 10 V —
Power Dissipation (PD) at Tc=25C 150 W —
Total Gate Charge (Qg) 44.7 nC 150 nC
Suhu Hubung Kerja -55C to +150C -55°C to +175°C
Technology HEXFET (5th Generation) StrongIRFET™, N-Channel Trench MOSFET
Tipe Transistor N-Channel Enhancement Mode —
Paket TO-220AB (through-hole, 3-pin) TO-220AB (through-hole, 3 leads)
Tipe Mounting Through Hole Through Hole
Avalanche Energy Rated Yes —
dv/dt Rating Dynamic, rated —
Status RoHS Compliant Compliant
Lead-Free Yes (PBF suffix) —
Manufacturer Infineon (formerly International Rectifier) Infineon (formerly International Rectifier)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25°C) — 195 A
Silicon-Limited Drain Current — 250 A
R_DS(on) typ @ VGS=10V — 1.5 mΩ
R_DS(on) max @ VGS=10V — 2.0 mΩ
Gate-Source Threshold Voltage (VGS(th) typ) — 3.0 V (1.7 V min, 3.9 V max per datasheet family)
Miller Plateau Charge (Qgd) — 49 nC
Power Dissipation (PD @ Tc=25°C) — 230 W
Thermal Resistance Junction-to-Case (RθJC) — 0.62 °C/W
Lead Finish — Lead-free (PBF - Pb-free plating)
Level MSL — Not Applicable (through-hole package)
AEC-Q101 Automotive — Not qualified (industrial/consumer)

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