IRF640NPBF vs IRFB7437PBF 比較
詳細並排比較 IRF640NPBF 由 Infineon 與 IRFB7437PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF640NPBF | IRFB7437PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | — |
| Total Gate Charge (Qg) | 44.7 nC | 150 nC |
| 工作接面溫度 | -55C to +150C | -55°C to +175°C |
| Technology | HEXFET (5th Generation) | StrongIRFET™, N-Channel Trench MOSFET |
| 電晶體類型 | N-Channel Enhancement Mode | — |
| 封裝 | TO-220AB (through-hole, 3-pin) | TO-220AB (through-hole, 3 leads) |
| 安裝類型 | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon (formerly International Rectifier) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 195 A |
| Silicon-Limited Drain Current | — | 250 A |
| R_DS(on) typ @ VGS=10V | — | 1.5 mΩ |
| R_DS(on) max @ VGS=10V | — | 2.0 mΩ |
| Gate-Source Threshold Voltage (VGS(th) typ) | — | 3.0 V (1.7 V min, 3.9 V max per datasheet family) |
| Miller Plateau Charge (Qgd) | — | 49 nC |
| Power Dissipation (PD @ Tc=25°C) | — | 230 W |
| Thermal Resistance Junction-to-Case (RθJC) | — | 0.62 °C/W |
| Lead Finish | — | Lead-free (PBF - Pb-free plating) |
| MSL 等級 | — | Not Applicable (through-hole package) |
| AEC-Q101 Automotive | — | Not qualified (industrial/consumer) |