IRF640NPBF vs IRFB7437PBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRF640NPBF tarafından Infineon ve IRFB7437PBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRF640NPBF IRFB7437PBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at Tc 18 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current value]
Gate-to-Source Voltage (VGS) max ±20 V —
Static Drain-to-Source On-Resistance (RDS(on)) 150 mOhm max at VGS = 10 V —
Power Dissipation (PD) at Tc=25C 150 W —
Total Gate Charge (Qg) 44.7 nC 150 nC
İşletim Jant Sıcaklığı -55C to +150C -55°C to +175°C
Technology HEXFET (5th Generation) StrongIRFET™, N-Channel Trench MOSFET
Transistor Türü N-Channel Enhancement Mode —
Paket TO-220AB (through-hole, 3-pin) TO-220AB (through-hole, 3 leads)
Montaj Türü Through Hole Through Hole
Avalanche Energy Rated Yes —
dv/dt Rating Dynamic, rated —
RoHS Durumu Compliant Compliant
Lead-Free Yes (PBF suffix) —
Manufacturer Infineon (formerly International Rectifier) Infineon (formerly International Rectifier)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25°C) — 195 A
Silicon-Limited Drain Current — 250 A
R_DS(on) typ @ VGS=10V — 1.5 mΩ
R_DS(on) max @ VGS=10V — 2.0 mΩ
Gate-Source Threshold Voltage (VGS(th) typ) — 3.0 V (1.7 V min, 3.9 V max per datasheet family)
Miller Plateau Charge (Qgd) — 49 nC
Power Dissipation (PD @ Tc=25°C) — 230 W
Thermal Resistance Junction-to-Case (RθJC) — 0.62 °C/W
Lead Finish — Lead-free (PBF - Pb-free plating)
MSL Seviyesi — Not Applicable (through-hole package)
AEC-Q101 Automotive — Not qualified (industrial/consumer)

Dökümanlar & Kaynaklar

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