IRF7309TRPBF vs IRF7832TRPBF Perbandingan
Perbandingan bersamaan detil IRF7309TRPBF dari Infineon dan IRF7832TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF7309TRPBF | IRF7832TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Configuration | Dual N-Channel + P-Channel (Complementary) | — |
| Polarity | N+P | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (N-channel, TA=25C) | 4 A | — |
| Continuous Drain Current (P-channel, TA=25C) | 3 A | — |
| On-Resistance (N-channel, max) | 50 mOhm | — |
| On-Resistance (P-channel, max) | [DATA_NEEDED: RDS(on) P-channel value] | — |
| Power Dissipation (TA=25C) | 1.4 W | — |
| Technology | IR HEXFET Generation V | HEXFET (trench MOSFET) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Rentang Suhu Kerja | -55C to +150C (TJ) | -55 C to +150 C (TJ) |
| Paket | 8-SO (SOIC-8) | 8-SO (SOIC-8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | MSL-1 (unlimited floor life per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Lead-Free Status | Yes (TRPBF suffix = Pb-free) | — |
| Status RoHS | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7832TRPBF |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 20 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.0 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typical | — | 1.0 V to 2.5 V |
| Total Gate Charge (Qg) typical | — | 34 nC |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Lead-Free | — | Yes |