IRF7309TRPBF vs IRF7832TRPBF 比較

詳細並排比較 IRF7309TRPBF 由 Infineon 與 IRF7832TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF7309TRPBF IRF7832TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Configuration Dual N-Channel + P-Channel (Complementary) —
Polarity N+P —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (N-channel, TA=25C) 4 A —
Continuous Drain Current (P-channel, TA=25C) 3 A —
On-Resistance (N-channel, max) 50 mOhm —
On-Resistance (P-channel, max) [DATA_NEEDED: RDS(on) P-channel value] —
Power Dissipation (TA=25C) 1.4 W —
Technology IR HEXFET Generation V HEXFET (trench MOSFET)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
工作溫度範圍 -55C to +150C (TJ) -55 C to +150 C (TJ)
封裝 8-SO (SOIC-8) 8-SO (SOIC-8)
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL-1 (unlimited floor life per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Lead-Free Status Yes (TRPBF suffix = Pb-free) —
RoHS 狀態 Compliant Compliant
Packaging Tape & Reel —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF7832TRPBF
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 20 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 4.0 mOhm
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) typical — 1.0 V to 2.5 V
Total Gate Charge (Qg) typical — 34 nC
Power Dissipation (PD) at TA=25C — 2.5 W
Lead-Free — Yes

資料表與資源

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