IRF7309TRPBF vs IRF7832TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7309TRPBF sa pamamagitan ng Infineon at IRF7832TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7309TRPBF IRF7832TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Configuration Dual N-Channel + P-Channel (Complementary) —
Polarity N+P —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (N-channel, TA=25C) 4 A —
Continuous Drain Current (P-channel, TA=25C) 3 A —
On-Resistance (N-channel, max) 50 mOhm —
On-Resistance (P-channel, max) [DATA_NEEDED: RDS(on) P-channel value] —
Power Dissipation (TA=25C) 1.4 W —
Technology IR HEXFET Generation V HEXFET (trench MOSFET)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Hanay ng Temperature na Operasyon -55C to +150C (TJ) -55 C to +150 C (TJ)
Packhaging 8-SO (SOIC-8) 8-SO (SOIC-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL MSL-1 (unlimited floor life per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Lead-Free Status Yes (TRPBF suffix = Pb-free) —
Tindminan RoHS Compliant Compliant
Packaging Tape & Reel —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF7832TRPBF
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 20 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 4.0 mOhm
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) typical — 1.0 V to 2.5 V
Total Gate Charge (Qg) typical — 34 nC
Power Dissipation (PD) at TA=25C — 2.5 W
Lead-Free — Yes

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