IRF7343TRPBF vs IRF7342PBF Perbandingan
Perbandingan bersamaan detil IRF7343TRPBF dari Infineon dan IRF7342PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF7343TRPBF | IRF7342PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Status | Active | — |
| Tipe Transistor | N and P-Channel Complementary MOSFET Array | — |
| Technology | IR MOSFET (HEXFET Generation V) | HEXFET (Gen V) - P-Channel MOSFET Array |
| Drain-to-Source Voltage (VDS) - N-Channel | 55 V | — |
| Drain-to-Source Voltage (VDS) - P-Channel | 55 V | — |
| Continuous Drain Current (ID) - N-Channel | 4.7 A | — |
| Continuous Drain Current (ID) - P-Channel | 3.4 A | — |
| On-Resistance (RDS(on)) - N-Channel | 0.043 ohm (typical per chipdig.com) | — |
| On-Resistance (RDS(on)) max | 50 mOhm | — |
| Power Dissipation (PD) | 2 W | — |
| Paket | 8-SOIC (SO-8) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Lead-Free | Yes | — |
| RoHS Compliance | Compliant | — |
| Part Number | — | IRF7342PBF |
| Original Mfr | — | International Rectifier (now Infineon) |
| Configuration | — | Dual P-Channel (2 independent MOSFETs) |
| Drain-Source Voltage V(DSS) | — | -55 V |
| Continuous Drain Current I(D) | — | 3.4 A |
| On-Resistance R(DS(on)) | — | 0.105 ohm |
| Power Dissipation P(D) | — | 2 W |
| Paket / Case | — | 8-SOIC (SO-8) |
| Rentang Suhu Kerja | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Vgs(th) | — | [DATA_NEEDED: Vgs(th)] |
| Switching Frequency Optimization | — | < 100 kHz |
| Status RoHS | — | Compliant |
| Halogen Status | — | Halogen-Free |
| Qualification | — | JEDEC standard |