IRF7343TRPBF vs IRF7342PBF 比較

詳細並排比較 IRF7343TRPBF 由 Infineon 與 IRF7342PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRF7343TRPBF IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon

IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon

IRF7343TRPBF ✓ 啟用中

規格比較

參數 IRF7343TRPBF IRF7342PBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Status Active —
電晶體類型 N and P-Channel Complementary MOSFET Array —
Technology IR MOSFET (HEXFET Generation V) HEXFET (Gen V) - P-Channel MOSFET Array
Drain-to-Source Voltage (VDS) - N-Channel 55 V —
Drain-to-Source Voltage (VDS) - P-Channel 55 V —
Continuous Drain Current (ID) - N-Channel 4.7 A —
Continuous Drain Current (ID) - P-Channel 3.4 A —
On-Resistance (RDS(on)) - N-Channel 0.043 ohm (typical per chipdig.com) —
On-Resistance (RDS(on)) max 50 mOhm —
Power Dissipation (PD) 2 W —
封裝 8-SOIC (SO-8) —
安裝類型 Surface Mount Surface Mount
Lead-Free Yes —
RoHS Compliance Compliant —
Part Number — IRF7342PBF
Original Mfr — International Rectifier (now Infineon)
Configuration — Dual P-Channel (2 independent MOSFETs)
Drain-Source Voltage V(DSS) — -55 V
Continuous Drain Current I(D) — 3.4 A
On-Resistance R(DS(on)) — 0.105 ohm
Power Dissipation P(D) — 2 W
封裝 / 外殼 — 8-SOIC (SO-8)
工作溫度範圍 — [DATA_NEEDED: operating temperature range]
Gate Threshold Vgs(th) — [DATA_NEEDED: Vgs(th)]
Switching Frequency Optimization — < 100 kHz
RoHS 狀態 — Compliant
Halogen Status — Halogen-Free
Qualification — JEDEC standard

資料表與資源

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