IRF7343TRPBF vs IRF7342PBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7343TRPBF disebabkan oleh Infineon dan IRF7342PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF7343TRPBF | IRF7342PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Status | Active | — |
| Jenis Transistor | N and P-Channel Complementary MOSFET Array | — |
| Technology | IR MOSFET (HEXFET Generation V) | HEXFET (Gen V) - P-Channel MOSFET Array |
| Drain-to-Source Voltage (VDS) - N-Channel | 55 V | — |
| Drain-to-Source Voltage (VDS) - P-Channel | 55 V | — |
| Continuous Drain Current (ID) - N-Channel | 4.7 A | — |
| Continuous Drain Current (ID) - P-Channel | 3.4 A | — |
| On-Resistance (RDS(on)) - N-Channel | 0.043 ohm (typical per chipdig.com) | — |
| On-Resistance (RDS(on)) max | 50 mOhm | — |
| Power Dissipation (PD) | 2 W | — |
| Kemasan | 8-SOIC (SO-8) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Lead-Free | Yes | — |
| RoHS Compliance | Compliant | — |
| Part Number | — | IRF7342PBF |
| Original Mfr | — | International Rectifier (now Infineon) |
| Configuration | — | Dual P-Channel (2 independent MOSFETs) |
| Drain-Source Voltage V(DSS) | — | -55 V |
| Continuous Drain Current I(D) | — | 3.4 A |
| On-Resistance R(DS(on)) | — | 0.105 ohm |
| Power Dissipation P(D) | — | 2 W |
| Kemasan / Case | — | 8-SOIC (SO-8) |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Vgs(th) | — | [DATA_NEEDED: Vgs(th)] |
| Switching Frequency Optimization | — | < 100 kHz |
| Status RoHS | — | Compliant |
| Halogen Status | — | Halogen-Free |
| Qualification | — | JEDEC standard |