IRF7343TRPBF vs IRF7351TRPBF Perbandingan
Perbandingan bersamaan detil IRF7343TRPBF dari Infineon dan IRF7351TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF7343TRPBF | IRF7351TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Status | Active | — |
| Tipe Transistor | N and P-Channel Complementary MOSFET Array | — |
| Technology | IR MOSFET (HEXFET Generation V) | IR MOSFET (HEXFET trench) |
| Drain-to-Source Voltage (VDS) - N-Channel | 55 V | — |
| Drain-to-Source Voltage (VDS) - P-Channel | 55 V | — |
| Continuous Drain Current (ID) - N-Channel | 4.7 A | — |
| Continuous Drain Current (ID) - P-Channel | 3.4 A | — |
| On-Resistance (RDS(on)) - N-Channel | 0.043 ohm (typical per chipdig.com) | — |
| On-Resistance (RDS(on)) max | 50 mOhm | — |
| Power Dissipation (PD) | 2 W | 2 W |
| Paket | 8-SOIC (SO-8) | 8-SO (SO-8 / SOIC-8) Surface Mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Lead-Free | Yes | Yes |
| RoHS Compliance | Compliant | — |
| Part Number | — | IRF7351TRPBF |
| Configuration | — | Dual N-Channel MOSFET (Half-Bridge) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 8 A |
| On-Resistance RDS(on) max | — | 17.8 mOhm |
| On-Resistance RDS(on) typ (per digchips) | — | 0.0137 ohm (13.7 mOhm) |
| Total Gate Charge (Qg) | — | 24 nC |
| Suhu Kerja | — | -55C to +150C (junction) |
| Typical Application | — | Synchronous Rectifier for Isolated DC-DC Converters |
| Status RoHS | — | Compliant (PBF suffix = lead-free) |
| Level MSL | — | [DATA_NEEDED: MSL Level] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |