IRF7343TRPBF vs IRF7351TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7343TRPBF disebabkan oleh Infineon dan IRF7351TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7343TRPBF IRF7351TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Status Active —
Jenis Transistor N and P-Channel Complementary MOSFET Array —
Technology IR MOSFET (HEXFET Generation V) IR MOSFET (HEXFET trench)
Drain-to-Source Voltage (VDS) - N-Channel 55 V —
Drain-to-Source Voltage (VDS) - P-Channel 55 V —
Continuous Drain Current (ID) - N-Channel 4.7 A —
Continuous Drain Current (ID) - P-Channel 3.4 A —
On-Resistance (RDS(on)) - N-Channel 0.043 ohm (typical per chipdig.com) —
On-Resistance (RDS(on)) max 50 mOhm —
Power Dissipation (PD) 2 W 2 W
Kemasan 8-SOIC (SO-8) 8-SO (SO-8 / SOIC-8) Surface Mount
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free Yes Yes
RoHS Compliance Compliant —
Part Number — IRF7351TRPBF
Configuration — Dual N-Channel MOSFET (Half-Bridge)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 8 A
On-Resistance RDS(on) max — 17.8 mOhm
On-Resistance RDS(on) typ (per digchips) — 0.0137 ohm (13.7 mOhm)
Total Gate Charge (Qg) — 24 nC
Suhu Operasi — -55C to +150C (junction)
Typical Application — Synchronous Rectifier for Isolated DC-DC Converters
Status RoHS — Compliant (PBF suffix = lead-free)
Aras MSL — [DATA_NEEDED: MSL Level]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]

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