IRF7343TRPBF vs IRF7351TRPBF 比較
詳細並排比較 IRF7343TRPBF 由 Infineon 與 IRF7351TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF7343TRPBF | IRF7351TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Status | Active | — |
| 電晶體類型 | N and P-Channel Complementary MOSFET Array | — |
| Technology | IR MOSFET (HEXFET Generation V) | IR MOSFET (HEXFET trench) |
| Drain-to-Source Voltage (VDS) - N-Channel | 55 V | — |
| Drain-to-Source Voltage (VDS) - P-Channel | 55 V | — |
| Continuous Drain Current (ID) - N-Channel | 4.7 A | — |
| Continuous Drain Current (ID) - P-Channel | 3.4 A | — |
| On-Resistance (RDS(on)) - N-Channel | 0.043 ohm (typical per chipdig.com) | — |
| On-Resistance (RDS(on)) max | 50 mOhm | — |
| Power Dissipation (PD) | 2 W | 2 W |
| 封裝 | 8-SOIC (SO-8) | 8-SO (SO-8 / SOIC-8) Surface Mount |
| 安裝類型 | Surface Mount | Surface Mount |
| Lead-Free | Yes | Yes |
| RoHS Compliance | Compliant | — |
| Part Number | — | IRF7351TRPBF |
| Configuration | — | Dual N-Channel MOSFET (Half-Bridge) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 8 A |
| On-Resistance RDS(on) max | — | 17.8 mOhm |
| On-Resistance RDS(on) typ (per digchips) | — | 0.0137 ohm (13.7 mOhm) |
| Total Gate Charge (Qg) | — | 24 nC |
| 工作溫度 | — | -55C to +150C (junction) |
| Typical Application | — | Synchronous Rectifier for Isolated DC-DC Converters |
| RoHS 狀態 | — | Compliant (PBF suffix = lead-free) |
| MSL 等級 | — | [DATA_NEEDED: MSL Level] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |