IRF9530NPBF vs IRF9540NPBF Perbandingan

Perbandingan bersamaan detil IRF9530NPBF dari Infineon dan IRF9540NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF9530NPBF IRF9540NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) -100 V —
Continuous Drain Current (ID) at TC=25°C -14 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=-10V 200 mΩ —
Gate-Source Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) typ 38.7 nC —
Maximum Power Dissition at TC=25°C 79 W —
Suhu Hubung Kerja -55°C to +175°C —
Paket TO-220AB (through-hole) —
Tipe Mounting Through Hole Through Hole
Mounting Screw Torque (max) [DATA_NEEDED: maximum torque] —
Avalanche Rating Repetitive avalanche rated —
dv/dt Rating Dynamic dV/dt rated —
Lead-Free / RoHS Status Lead-Free (PBF suffix), RoHS compliant —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF9540NPBF
Tipe Transistor — P-Channel MOSFET (HEXFET Power MOSFET)
Drain-to-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at Tc — -23 A
Gate-to-Source Voltage (VGS) max — +/-20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V — 117 mOhm
Total Gate Charge (Qg) — 64.7 nC
Power Dissipation (PD) at Tc=25C — 140 W
Rentang Suhu Hubung Kerja — -55 C to +175 C
Paket / Case — TO-220AB (through-hole, 3 pins + tab)
Process Technology — Planar HEXFET cell structure
Qualification — JEDEC standard
Status RoHS — Compliant
Lead-Free — Yes (Pb-free matte tin plating)

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