IRF9530NPBF vs IRF9540NPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF9530NPBF sa pamamagitan ng Infineon at IRF9540NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IRF9530NPBF - -100V P-Channel HEXFET MOSFET, 14A, TO-220AB | Infineon
IRF9530NPBF ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRF9530NPBF | IRF9540NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TC=25°C | -14 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=-10V | 200 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) typ | 38.7 nC | — |
| Maximum Power Dissition at TC=25°C | 79 W | — |
| Temperature ng Junction na Operasyon | -55°C to +175°C | — |
| Packhaging | TO-220AB (through-hole) | — |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Mounting Screw Torque (max) | [DATA_NEEDED: maximum torque] | — |
| Avalanche Rating | Repetitive avalanche rated | — |
| dv/dt Rating | Dynamic dV/dt rated | — |
| Lead-Free / RoHS Status | Lead-Free (PBF suffix), RoHS compliant | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF9540NPBF |
| Uri ng Transistor | — | P-Channel MOSFET (HEXFET Power MOSFET) |
| Drain-to-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at Tc | — | -23 A |
| Gate-to-Source Voltage (VGS) max | — | +/-20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | — | 117 mOhm |
| Total Gate Charge (Qg) | — | 64.7 nC |
| Power Dissipation (PD) at Tc=25C | — | 140 W |
| Hanay ng Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Packhaging / Kaso | — | TO-220AB (through-hole, 3 pins + tab) |
| Process Technology | — | Planar HEXFET cell structure |
| Qualification | — | JEDEC standard |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes (Pb-free matte tin plating) |