IRF9530NPBF vs IRF9540NPBF 比較

詳細並排比較 IRF9530NPBF 由 Infineon 與 IRF9540NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF9530NPBF IRF9540NPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity P-Channel —
Drain-Source Voltage (VDS) -100 V —
Continuous Drain Current (ID) at TC=25°C -14 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=-10V 200 mΩ —
Gate-Source Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) typ 38.7 nC —
Maximum Power Dissition at TC=25°C 79 W —
工作接面溫度 -55°C to +175°C —
封裝 TO-220AB (through-hole) —
安裝類型 Through Hole Through Hole
Mounting Screw Torque (max) [DATA_NEEDED: maximum torque] —
Avalanche Rating Repetitive avalanche rated —
dv/dt Rating Dynamic dV/dt rated —
Lead-Free / RoHS Status Lead-Free (PBF suffix), RoHS compliant —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF9540NPBF
電晶體類型 — P-Channel MOSFET (HEXFET Power MOSFET)
Drain-to-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at Tc — -23 A
Gate-to-Source Voltage (VGS) max — +/-20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V — 117 mOhm
Total Gate Charge (Qg) — 64.7 nC
Power Dissipation (PD) at Tc=25C — 140 W
工作接面溫度範圍 — -55 C to +175 C
封裝 / 外殼 — TO-220AB (through-hole, 3 pins + tab)
Process Technology — Planar HEXFET cell structure
Qualification — JEDEC standard
RoHS 狀態 — Compliant
Lead-Free — Yes (Pb-free matte tin plating)

資料表與資源

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