IRF9530NPBF vs IRF9540NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF9530NPBF disebabkan oleh Infineon dan IRF9540NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF9530NPBF IRF9540NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) -100 V —
Continuous Drain Current (ID) at TC=25°C -14 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=-10V 200 mΩ —
Gate-Source Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) typ 38.7 nC —
Maximum Power Dissition at TC=25°C 79 W —
Suhu Hubungan Operasi -55°C to +175°C —
Kemasan TO-220AB (through-hole) —
Jenis Pemasangan Through Hole Through Hole
Mounting Screw Torque (max) [DATA_NEEDED: maximum torque] —
Avalanche Rating Repetitive avalanche rated —
dv/dt Rating Dynamic dV/dt rated —
Lead-Free / RoHS Status Lead-Free (PBF suffix), RoHS compliant —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF9540NPBF
Jenis Transistor — P-Channel MOSFET (HEXFET Power MOSFET)
Drain-to-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at Tc — -23 A
Gate-to-Source Voltage (VGS) max — +/-20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V — 117 mOhm
Total Gate Charge (Qg) — 64.7 nC
Power Dissipation (PD) at Tc=25C — 140 W
Gambaran Suhu Hubungan Operasi — -55 C to +175 C
Kemasan / Case — TO-220AB (through-hole, 3 pins + tab)
Process Technology — Planar HEXFET cell structure
Qualification — JEDEC standard
Status RoHS — Compliant
Lead-Free — Yes (Pb-free matte tin plating)

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