IRFR024NTRPBF vs IRF8714TRPBF Perbandingan

Perbandingan bersamaan detil IRFR024NTRPBF dari Infineon dan IRF8714TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR024NTRPBF IRF8714TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Series HEXFET Power MOSFET (5th generation) —
Tipe Transistor N-Channel MOSFET —
Maximum Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) 17 A (at TC = 25 C) —
Pulsed Drain Current (IDM) 60 A [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) 75 mOhm max (at VGS = 10 V) —
Gate-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Typical Gate Charge (Qg) 13.3 nC —
Total Power Dissipation (PD) 45 W (at TC = 25 C) —
Suhu Hubung Kerja -55 C to +175 C —
Paket TO-252-3 (DPAK, SC-63), surface mount SO-8 (8-SOIC)
Tipe Mounting Surface Mount Surface Mount
Packaging Tape and Reel (TR) —
RoHS Compliance Compliant (Pb-free / PbF terminations) —
Level MSL 1 (per JEDEC J-STD-020) 1 (per Infineon package qualification)
FET Type — N-Channel
Technology — HEXFET / StrongIRFET (planar MOSFET)
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 14 A
On-State Resistance (RDS(on)) max at VGS=10V — 8.7 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical range]
Gate Charge (Qg) typical — 8.1 nC
Gate-Source Voltage (VGS) max — ±20 V
Power Dissipation (PD) at TA=25C — 2.5 W
Rentang Suhu Kerja — -55C to +150C (junction)
Jumlah Pin — 8
Avalanche Rated — Yes
Lead-Free / RoHS — Lead-Free / RoHS Compliant

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