IRFR024NTRPBF vs IRF8714TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR024NTRPBF disebabkan oleh Infineon dan IRF8714TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR024NTRPBF IRF8714TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Series HEXFET Power MOSFET (5th generation) —
Jenis Transistor N-Channel MOSFET —
Maximum Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) 17 A (at TC = 25 C) —
Pulsed Drain Current (IDM) 60 A [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) 75 mOhm max (at VGS = 10 V) —
Gate-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Typical Gate Charge (Qg) 13.3 nC —
Total Power Dissipation (PD) 45 W (at TC = 25 C) —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan TO-252-3 (DPAK, SC-63), surface mount SO-8 (8-SOIC)
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape and Reel (TR) —
RoHS Compliance Compliant (Pb-free / PbF terminations) —
Aras MSL 1 (per JEDEC J-STD-020) 1 (per Infineon package qualification)
FET Type — N-Channel
Technology — HEXFET / StrongIRFET (planar MOSFET)
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 14 A
On-State Resistance (RDS(on)) max at VGS=10V — 8.7 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical range]
Gate Charge (Qg) typical — 8.1 nC
Gate-Source Voltage (VGS) max — ±20 V
Power Dissipation (PD) at TA=25C — 2.5 W
Gambaran Suhu Operasi — -55C to +150C (junction)
Kiraan Pin — 8
Avalanche Rated — Yes
Lead-Free / RoHS — Lead-Free / RoHS Compliant

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