IRFR3710ZTRPBF vs IRFR540ZTRPBF Perbandingan

Perbandingan bersamaan detil IRFR3710ZTRPBF dari Infineon dan IRFR540ZTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR3710ZTRPBF IRFR540ZTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 56 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 18 mOhm —
Power Dissipation (PD) at TC=25C 140 W —
Suhu Hubung Kerja -55C to +175C —
Technology HEXFET (IR MOSFET) IR MOSFET
Paket TO-252AA (DPAK) TO-252AA (DPAK) surface mount
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Lead-Free Yes —
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) — 35 A (at Tc)
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
On-Resistance Rds(on) Max — 28.5 mOhm at Vgs=10V
Gate-Source Threshold Vgs(th) — [DATA_NEEDED: Vgs(th) typical value]
Total Gate Charge (Qg) — 39 nC
Power Dissipation (Pd) — 91 W (at Tc)
Rentang Suhu Kerja — -55 C to +175 C (junction)
Jumlah Pin — 3 (Gate, Drain, Source)
Level MSL — 1 (unlimited floor life at <30 C / 85% RH)
Lead-Free / Halogen-Free — Yes / Yes
Automotive Qualified — Yes (AEC-Q101)

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