IRFR3710ZTRPBF vs IRFR540ZTRPBF 比較

詳細並排比較 IRFR3710ZTRPBF 由 Infineon 與 IRFR540ZTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR3710ZTRPBF IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF ✓ 啟用中
Infineon
IRFR540ZTRPBF IRFR540ZTRPBF - 100V N-Ch MOSFET, 35A, DPAK | Infineon

IRFR540ZTRPBF - 100V N-Ch MOSFET, 35A, DPAK | Infineon

IRFR540ZTRPBF ✓ 啟用中

規格比較

參數 IRFR3710ZTRPBF IRFR540ZTRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 56 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 18 mOhm —
Power Dissipation (PD) at TC=25C 140 W —
工作接面溫度 -55C to +175C —
Technology HEXFET (IR MOSFET) IR MOSFET
封裝 TO-252AA (DPAK) TO-252AA (DPAK) surface mount
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) — 35 A (at Tc)
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
On-Resistance Rds(on) Max — 28.5 mOhm at Vgs=10V
Gate-Source Threshold Vgs(th) — [DATA_NEEDED: Vgs(th) typical value]
Total Gate Charge (Qg) — 39 nC
Power Dissipation (Pd) — 91 W (at Tc)
工作溫度範圍 — -55 C to +175 C (junction)
腳位數 — 3 (Gate, Drain, Source)
MSL 等級 — 1 (unlimited floor life at <30 C / 85% RH)
Lead-Free / Halogen-Free — Yes / Yes
Automotive Qualified — Yes (AEC-Q101)

資料表與資源

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