IRFR3710ZTRPBF vs IRFR540ZTRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR3710ZTRPBF disebabkan oleh Infineon dan IRFR540ZTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR3710ZTRPBF | IRFR540ZTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 18 mOhm | — |
| Power Dissipation (PD) at TC=25C | 140 W | — |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Technology | HEXFET (IR MOSFET) | IR MOSFET |
| Kemasan | TO-252AA (DPAK) | TO-252AA (DPAK) surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) | — | 35 A (at Tc) |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance Rds(on) Max | — | 28.5 mOhm at Vgs=10V |
| Gate-Source Threshold Vgs(th) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Total Gate Charge (Qg) | — | 39 nC |
| Power Dissipation (Pd) | — | 91 W (at Tc) |
| Gambaran Suhu Operasi | — | -55 C to +175 C (junction) |
| Kiraan Pin | — | 3 (Gate, Drain, Source) |
| Aras MSL | — | 1 (unlimited floor life at <30 C / 85% RH) |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Automotive Qualified | — | Yes (AEC-Q101) |