IRFR4615TRLPBF vs IRF530NPBF Perbandingan
Perbandingan bersamaan detil IRFR4615TRLPBF dari Infineon dan IRF530NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR4615TRLPBF | IRF530NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | IR MOSFET (N-Channel Enhancement Mode) | — |
| Drain-Source Voltage (VDS) | 150 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 60 A |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | ±20 V |
| On-Resistance RDS(on) max at VGS=10V | 42 mOhm | — |
| Total Gate Charge (Qg) | 26 nC | — |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Power Dissipation (PD) at TC=25C | 144 W | — |
| Avalanche Energy (EAS) | 109 mJ | — |
| Rentang Suhu Kerja | -55C to +175C | — |
| Paket | TO-252AA (DPAK) | — |
| Tipe Mounting | Surface Mount | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix indicates Pb-free) | — |
| Energi Pulsa Tandai | 109 mJ | — |
| Part Number | — | IRF530NPBF |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Tipe Transistor | — | N-Channel HEXFET Power MOSFET |
| Continuous Drain Current (ID) at Tc | — | 17 A |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 90 mOhm (max, approximate per datasheet) |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Maximum Power Dissition (Pd) at Tc | — | 70 W |
| Suhu Hubung Kerja | — | -55 C to +175 C |
| Paket / Case | — | TO-220AB (through-hole) |
| Avalanche Rated | — | Yes |
| Status RoHS | — | Compliant |
| Level MSL | — | N/A (through-hole) |
| Configuration | — | Single N-channel, 3 pins (Gate, Drain, Source) |