IRFR4615TRLPBF vs IRF530NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR4615TRLPBF disebabkan oleh Infineon dan IRF530NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF ✓ Aktif

Pengandingan Spesifikasi

Parametr IRFR4615TRLPBF IRF530NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology IR MOSFET (N-Channel Enhancement Mode) —
Drain-Source Voltage (VDS) 150 V 100 V
Continuous Drain Current (ID) at TC=25C 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 60 A
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] ±20 V
On-Resistance RDS(on) max at VGS=10V 42 mOhm —
Total Gate Charge (Qg) 26 nC —
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Power Dissipation (PD) at TC=25C 144 W —
Avalanche Energy (EAS) 109 mJ —
Gambaran Suhu Operasi -55C to +175C —
Kemasan TO-252AA (DPAK) —
Jenis Pemasangan Surface Mount Through Hole
Lead-Free / RoHS Yes (PBF suffix indicates Pb-free) —
Tenaga Gesa tunggal padek 109 mJ —
Part Number — IRF530NPBF
Manufacturer — Infineon Technologies (formerly International Rectifier)
Jenis Transistor — N-Channel HEXFET Power MOSFET
Continuous Drain Current (ID) at Tc — 17 A
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V — 90 mOhm (max, approximate per datasheet)
Gate Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Maximum Power Dissition (Pd) at Tc — 70 W
Suhu Hubungan Operasi — -55 C to +175 C
Kemasan / Case — TO-220AB (through-hole)
Avalanche Rated — Yes
Status RoHS — Compliant
Aras MSL — N/A (through-hole)
Configuration — Single N-channel, 3 pins (Gate, Drain, Source)

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