IRFR4615TRLPBF vs IRF530NPBF 比較
詳細並排比較 IRFR4615TRLPBF 由 Infineon 與 IRF530NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR4615TRLPBF | IRF530NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | IR MOSFET (N-Channel Enhancement Mode) | — |
| Drain-Source Voltage (VDS) | 150 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 60 A |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | ±20 V |
| On-Resistance RDS(on) max at VGS=10V | 42 mOhm | — |
| Total Gate Charge (Qg) | 26 nC | — |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Power Dissipation (PD) at TC=25C | 144 W | — |
| Avalanche Energy (EAS) | 109 mJ | — |
| 工作溫度範圍 | -55C to +175C | — |
| 封裝 | TO-252AA (DPAK) | — |
| 安裝類型 | Surface Mount | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix indicates Pb-free) | — |
| 單脈衝突崩能量 | 109 mJ | — |
| Part Number | — | IRF530NPBF |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| 電晶體類型 | — | N-Channel HEXFET Power MOSFET |
| Continuous Drain Current (ID) at Tc | — | 17 A |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 90 mOhm (max, approximate per datasheet) |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Maximum Power Dissition (Pd) at Tc | — | 70 W |
| 工作接面溫度 | — | -55 C to +175 C |
| 封裝 / 外殼 | — | TO-220AB (through-hole) |
| Avalanche Rated | — | Yes |
| RoHS 狀態 | — | Compliant |
| MSL 等級 | — | N/A (through-hole) |
| Configuration | — | Single N-channel, 3 pins (Gate, Drain, Source) |