IRFR4615TRLPBF vs IRLR3110ZTRPBF Perbandingan

Perbandingan bersamaan detil IRFR4615TRLPBF dari Infineon dan IRLR3110ZTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRFR4615TRLPBF IRLR3110ZTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology IR MOSFET (N-Channel Enhancement Mode) HEXFET / Trench MOSFET
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at TC=25C 33 A 42 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
On-Resistance RDS(on) max at VGS=10V 42 mOhm —
Total Gate Charge (Qg) 26 nC 15 nC
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Power Dissipation (PD) at TC=25C 144 W 140 W
Avalanche Energy (EAS) 109 mJ —
Rentang Suhu Kerja -55C to +175C —
Paket TO-252AA (DPAK) TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix indicates Pb-free) —
Energi Pulsa Tandai 109 mJ —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
RDS(on) max @ VGS=10V — 14 mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Suhu Hubung Kerja — -55C to +175C
Level MSL — 1 (Unlimited)
Status RoHS — Compliant
Lead-Free Plating — Yes (PBF suffix)
Bebas Halogen — Yes

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon