IRFR4615TRLPBF vs IRLR3110ZTRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR4615TRLPBF disebabkan oleh Infineon dan IRLR3110ZTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR4615TRLPBF | IRLR3110ZTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | IR MOSFET (N-Channel Enhancement Mode) | HEXFET / Trench MOSFET |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25C | 33 A | 42 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| On-Resistance RDS(on) max at VGS=10V | 42 mOhm | — |
| Total Gate Charge (Qg) | 26 nC | 15 nC |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Power Dissipation (PD) at TC=25C | 144 W | 140 W |
| Avalanche Energy (EAS) | 109 mJ | — |
| Gambaran Suhu Operasi | -55C to +175C | — |
| Kemasan | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates Pb-free) | — |
| Tenaga Gesa tunggal padek | 109 mJ | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| RDS(on) max @ VGS=10V | — | 14 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Aras MSL | — | 1 (Unlimited) |
| Status RoHS | — | Compliant |
| Lead-Free Plating | — | Yes (PBF suffix) |
| Boson Bebas | — | Yes |