IRFR5305TRPBF vs IPD380P06NMATMA1 Perbandingan

Perbandingan bersamaan detil IRFR5305TRPBF dari Infineon dan IPD380P06NMATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD380P06NMATMA1 IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon

IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon

IPD380P06NMATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRFR5305TRPBF IPD380P06NMATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) Max -55 V —
Continuous Drain Current (ID) at TC=25C 31 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance (RDS(on)) Max at VGS=-10V 65 mOhm —
Gate-Source Threshold Voltage (VGS(th)) -2 V to -4 V —
Gate Charge (Qg) Typ [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 110 W —
Single-Pulse Avalanche Energy (EAS) 270 mJ —
Rentang Suhu Kerja -55 C to +175 C -55 C to +150 C (junction)
Paket TO-252AA (DPAK) PG-TO252-3 (DPAK), surface mount
Tipe Mounting Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) OptiMOS P-channel trench
Level MSL 1 1
Status RoHS Compliant (Pb-free PBF suffix) Compliant
Lead-Free Finish Yes (PBF suffix) —
Polarity / Channel Type — P-Channel
Drain-Source Voltage V(BR)DSS — 60 V
Arus Alir Berlanjut (TC=25°C) — 35 A
Power Dissipation (Tc) — 125 W
Gate Drive — Logic-level compatible
Avalanche Rated — Yes (per manufacturer datasheet)
Target Applications — Reverse-polarity protection, load switch, BMS, high-side switch
Lead-Free — Yes
Automotive Qualified — Not specified in provided data [DATA_NEEDED: AEC-Q100 grade]

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